The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2016
Filed:
Jul. 31, 2014
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Setagaya, JP;
Takuya Hirohashi, Atsugi, JP;
Masahiro Takahashi, Atsugi, JP;
Motoki Nakashima, Atsugi, JP;
Ryosuke Watanabe, Yamato, JP;
Masashi Tsubuku, Atsugi, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device includes a semiconductor layer, a gate electrode overlapping with the semiconductor layer, a first gate insulating layer between the semiconductor layer and the gate electrode, and a second gate insulating layer between the first gate insulating layer and the gate electrode. The first gate insulating layer includes an oxide in which the nitrogen content is lower than or equal to 5 at. %, and the second gate insulating layer includes charge trap states.