Rung Hung Hsueh

Title: Rung Hung Hsueh and Semiconductor Contact Structure Innovations.

Introduction

Rung Hung Hsueh is an inventor based in Hsinchu, Taiwan. His patent work focuses on semiconductor device structures and methods for forming contact structures. He is associated with Taiwan Semiconductor Manufacturing Company Limited and has 2 patents listed in the provided information.

Latest Patents

The listed patents address barrier structures and contact formation in semiconductor devices.

“Barrier Structure for Semiconductor Device” describes a method for making a semiconductor device with an improved contact structure. The process deposits a first dielectric material, a barrier material, and a second dielectric material in sequence. It then forms a two-slope contact opening, with the upper sidewall angle through the second dielectric material smaller than the lower sidewall angle through the first dielectric material, and fills the opening with conductive material.

A related patent with the same title describes a semiconductor device comprising a gate structure and a dielectric film stack. The stack includes a first interlayer dielectric, a barrier layer, and a second interlayer dielectric, with a contact extending through the layers. The contact sidewall has upper and lower portions with different slopes, and the transition between them occurs within the barrier layer.

Career Highlights

Hsueh’s listed patent contributions concern the design and fabrication of semiconductor contacts. The described structures and methods use dielectric layers and a barrier layer to shape contact openings and their sidewalls.

Collaborations

The provided information identifies Pin Chi Huang and Chien-Chang Fang as Hsueh’s coworkers. It does not specify their roles in the listed patents or describe particular collaborations.

Conclusion

Rung Hung Hsueh’s listed patent work centers on barrier-layer and contact-structure innovations for semiconductor devices, reflecting a focus on device architecture and manufacturing methods.