The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2024

Filed:

Jul. 22, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Pin Chi Huang, Hsinchu, TW;

Chien-Chang Fang, Hsinchu, TW;

Rung Hung Hsueh, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76865 (2013.01); H01L 21/0217 (2013.01); H01L 21/0245 (2013.01); H01L 21/02458 (2013.01); H01L 21/76832 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Methods for making semiconductor device having improve contact structures including the operations of depositing a first dielectric material, depositing a barrier material over the first dielectric material, depositing a second dielectric material over the barrier material, etching a two-slope contact opening with an upper sidewall angle of the opening through the second dielectric material that is less than a lower sidewall angle of the opening through the first dielectric material, and filling the two-slope contact opening with a conductive material, the conductive material.


Find Patent Forward Citations

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Huang, Pin. (2024). Barrier structure for semiconductor device (U.S. Patent No. 11996326). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11996326

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