Kaohsiung, Taiwan

Ruei-Ling Lin

This inventor holds 15 USPTO granted patents. Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., United Microelectronics Corp., Other. Active years: 1997-2003.


% Patents Active = 100.0

Average Co-Inventor Count = 3.1

ph-index = 8

Forward Citations = 359(Granted Patents)


Location History:

  • Kaohsiang, TW (1998)
  • Hsiung, TW (1998)
  • Kashsiung, TW (1998)
  • Hsin-Chu, TW (1999)
  • Kao Hsiung City, TW (1998 - 2000)
  • Kaohsiung, TW (1997 - 2003)

Company Filing History:


Years Active: 1997-2003

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15 patents (USPTO):Explore Patents

Title: Ruei-Ling Lin: Innovator in Flash Memory Technology

Introduction

Ruei-Ling Lin is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in flash memory devices. With a total of 15 patents to his name, Lin's work has had a substantial impact on the industry.

Latest Patents

One of Lin's latest patents is for a high-speed flash memory with a high coupling ratio. This innovative flash memory device includes a floating gate electrode, an interelectrode dielectric layer, and a control gate electrode. The interelectrode dielectric layer is formed on top of the floating gate electrode, while the control gate electrode is positioned above the interelectrode dielectric layer. The design features a doped silicon semiconductor substrate covered with variable thickness silicon oxide regions, which are crucial for the device's performance.

Another notable patent is for a multi-level, split-gate flash memory cell. This semiconductor memory device is constructed on a doped semiconductor substrate and includes a tunnel oxide layer, a doped first polysilicon layer, and a control gate electrode that spans a pair of floating gate electrodes. The intricate design allows for efficient operation and enhanced memory capabilities.

Career Highlights

Ruei-Ling Lin has worked with leading companies in the semiconductor industry, including Taiwan Semiconductor Manufacturing Company Ltd. and United Microelectronics Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in flash memory technology.

Collaborations

Throughout his career, Lin has collaborated with notable colleagues such as Ching-Hsiang Hsu and Mong-Song Liang. These partnerships have fostered innovation and have been instrumental in the development of new technologies in the semiconductor field.

Conclusion

Ruei-Ling Lin's contributions to flash memory technology and his impressive portfolio of patents highlight his role as a key innovator in the semiconductor industry. His work continues to influence advancements in memory devices, showcasing the importance of innovation in technology.

Profile summary based on public USPTO records.
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