The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1998
Filed:
Jan. 23, 1997
Abstract
A compact contactless trenched flash memory array for semiconductor EEPROM devices is disclosed. The flash memory array comprises a number of memory cell units. Each of the cell units comprises a body line, source and drain regions and a stacked gate constructed over a silicon wafer substrate. The source and drain regions are buried regions and the body line is isolated by the surrounding buried source/drain regions and trenches formed to cut deep down to the substrate of the wafer. The stacked gate includes a first polysilicon layer, an oxide-nitride-oxide configuration, a second polysilicon layer, a pad oxide layer and a nitride layer. The source and drain buried regions sandwiches the body line, and the stacked gate substantially sits directly atop the body line. The flash memory array is free from the serious problem of short channel effect.