Essex Junction, VT, United States of America

Ronald A Warren

This inventor holds 23 USPTO granted patents and 1 published patent application, primarily in Semiconductor Fabrication. Top assignees: International Business Machines Corporation, Other. Active years: 1992-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ronald A Warren. Retrieved from https://idiyas.com/inventor/ronald-a-warren

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 100.0

Average Co-Inventor Count = 2.8

ph-index = 12

Forward Citations = 574(Granted Patents)


Location History:

  • Essex Juntion, VT (US) (1995)
  • Troy, NY (US) (1995 - 1996)
  • Milton, VT (US) (2003 - 2004)
  • Essex Junction, VT (US) (1992 - 2008)

Company Filing History:


Years Active: 1992-2008

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Areas of Expertise:
Etch Apparatus
Metal Oxide Monitor
Cryogenic Cooling
Sputtering Apparatus
Ion Implanter
Wafer Cleaning
Polyimide Dielectric
Self-Aligned Contacts
Copper Metallurgy
Thermal Process Systems
Physical Interference Detection
Multilayered Parts
23 patents (USPTO):Explore Patents

Title: **The Innovations and Contributions of Ronald A. Warren**

Introduction

Ronald A. Warren, based in Essex Junction, Vermont, has made significant contributions to the field of semiconductor technology with a remarkable portfolio of 23 patents. His innovative ideas have not only advanced manufacturing techniques but have also enhanced process efficiency in semiconductor fabrication.

Latest Patents

Warren’s latest inventions showcase his expertise in chemical processes and temperature monitoring in semiconductors. One of his patents is for an **etch apparatus**, which utilizes a hot phosphoric acid etchant to etch silicon nitride on semiconductor wafers. This process involves a recirculating path that stabilizes the etch selectivity by maintaining the concentration of silicon nitride within the etchant. By incorporating a porous filter coated with silicon nitride, this invention significantly enhances the etching process while minimizing the unwanted etching of silicon dioxide.

Another noteworthy patent by Warren is a **metal oxide temperature monitor**, designed to accurately monitor temperature distributions in a heating chamber used for semiconductor device fabrication. This method employs a copper layer deposited on a semiconductor wafer, which when heated, generates an oxide layer that affects the sheet resistance of the wafer. By analyzing spatial resistance distributions, the monitoring system can improve the uniformity of temperature across the wafer surface during subsequent fabrications. Furthermore, this monitor can be reconditioned for repeated use, reinforcing its practical utility in semiconductor manufacturing.

Career Highlights

Throughout his career, Warren has worked with prominent organizations, including the International Business Machines Corporation (IBM), where he developed and refined some of his patented technologies. His work has not only propelled his career forward but has also contributed to the foundational aspects of semiconductor advancements in a highly competitive industry.

Collaborations

Warren has collaborated with notable peers such as David Stanasolovich and Arne Watson Ballantine, fostering an environment of innovation and shared knowledge in the realm of semiconductor technology. Such collaborations have enriched his work and have played a crucial role in the development of his patents.

Conclusion

Ronald A. Warren’s notable contributions to semiconductor innovation exemplify the spirit of progress in technology. With an impressive list of patents that demonstrate his creative problem-solving skills, he continues to influence the industry through his ingenious inventions and collaborations. His work remains a testament to the importance of innovation in driving technological advancements in the semiconductor field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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