The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 15, 2002
Filed:
Dec. 30, 1999
Arne W. Ballantine, Coldspring, NY (US);
Edward C. Cooney, III, Jericho, VT (US);
George A. Dunbar, III, Essex Junction, VT (US);
Cheryl G. Faltermeier, Lagrange, NY (US);
Jeffrey D. Gilbert, Burlington, VT (US);
Ronald D. Goldblatt, Yorktown Heights, NY (US);
Nancy A. Greco, Lagrangeville, NY (US);
Stephen E. Greco, Lagrangeville, NY (US);
Frank V. Liucci, Wappingers Falls, NY (US);
Glenn Robert Miller, Essex Junction, VT (US);
Bruce A. Root, Westford, VT (US);
Andrew H. Simon, Fishkill, NY (US);
Anthony K. Stamper, Williston, VT (US);
Ronald A. Warren, Essex Junction, VT (US);
David H. Yao, Essex, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.