The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 1999
Filed:
Aug. 20, 1997
Michael E Bailey, Northfield, VT (US);
Ronald A Warren, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for controlling the implantation of ions into a target. An ion source chamber having a filament for causing evolution of the ions to be implanted is provided. An ion source reactant gas is provided for providing a source of the ion species to be implanted. A counteracting gas is provided to counter the chemical transport from or to the filament depending on the reaction between the ion source gas ions and the filament and to compensate for the reaction. The ion source reactant is introduced into the ion source chamber. Parameters regarding electrical or physical characteristics of the filament are measured. The counteracting gas is introduced based upon the measured parameters, wherein the counteracting gas forms ions to compensate for removal or deposition of material on the filament. The ions to be implanted are extracted from ion source chamber and directed to the target.