Company Filing History:
Years Active: 2002-2004
Title: **Innovator Spotlight: Roman J Hamerski**
Introduction
Roman J Hamerski is a notable inventor based in Olathe, Kansas, recognized for his contributions to the field of semiconductor technology. With a commendable portfolio of 10 patents, Hamerski's work primarily focuses on innovations that enhance the performance and reliability of high voltage electrical devices.
Latest Patents
Among Hamerski's latest patents is a groundbreaking invention titled "Method of Manufacturing a Device with Epitaxial Base." This high voltage electrical device is designed to operate with voltage properties exceeding 1000V. The device's structure includes a substrate layer, a base layer, and a top layer, with the substrate layer being sliced from an ingot created through monocrystalline growth. This crystal quality is crucial for maintaining high resistivity. The base layer consists of a highly doped, low resistivity epitaxial layer that enhances the device's performance. Additionally, the top layer is a diffusion layer that permeates into the substrate's upper surface. To prevent stress in the wafer, the epitaxial base is doped with germanium.
Another significant patent is titled "Apparatus and Method for Fabricating a High Reverse Voltage Semiconductor Device." This invention is vital in producing a high voltage semiconductor device capable of withstanding excessive breakdown and clamping voltages. It features a high resistivity substrate paired with a low resistivity layer that includes a stress-relieving dopant to ensure longevity and durability.
Career Highlights
Hamerski is currently employed at Fab-Tech Incorporated, a company known for its innovative advancements in semiconductor technology. Throughout his career, he has continually pushed the boundaries of electrical device engineering, contributing to several breakthroughs in high voltage applications.
Collaborations
In his endeavors, he collaborates with talented peers, including Walter Riley Buchanan and Wayne A Smith. Together, they foster an environment of innovation that catalyzes the development of cutting-edge technologies in their field.
Conclusion
Roman J Hamerski stands out as a prominent figure in the realm of semiconductor inventions. His patents not only reflect his technical expertise but also demonstrate a commitment to advancing high voltage electrical devices. As technology evolves, Hamerski's contributions will undoubtedly continue to influence the industry, paving the way for future innovations.