The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2004
Filed:
Jun. 04, 2003
Roman J. Hamerski, Olathe, KS (US);
Gary W. Gladish, Lake Winnebago, MO (US);
FabTech, Inc., Lee's Summit, MO (US);
Abstract
A high voltage electrical device ( ), having a substrate layer ( ), base layer ( ) and top layer ( ), provides high voltage properties in excess of 1000V. Slicing a wafer ( ) from an ingot ( ) created in by monocrystalline growth forms the substrate layer ( ), and this high quality crystal is used as the high resistivity layer in the device ( ). The base layer ( ) is a highly doped, low resistivity, epitaxial layer deposited on the lower surface ( ) of the substrate layer ( ) at a fast rate greater than approximately 2 microns/minute. The top layer ( ) is a diffusion layer diffused into an upper surface ( ) of the substrate layer ( ). To control stress in the wafer ( ), the epitaxial base is doped with germanium.