Gary W Gladish

Title: The Innovations of Gary W. Gladish

Introduction

Gary W. Gladish is an accomplished inventor based in Lake Winnebago, Missouri. He holds a patent for a method of manufacturing a high voltage electrical device. His innovative approach has contributed significantly to the field of electrical engineering.

Latest Patents

Gary W. Gladish's patent, titled "Method of manufacturing a device with epitaxial base," focuses on creating a high voltage electrical device that can operate at voltages exceeding 1000V. The device consists of a substrate layer, a base layer, and a top layer. The substrate layer is formed by slicing a wafer from an ingot created through monocrystalline growth. This high-quality crystal serves as the high resistivity layer in the device. The base layer is a highly doped, low resistivity, epitaxial layer deposited on the lower surface of the substrate layer at a rapid rate exceeding approximately 2 microns per minute. The top layer is a diffusion layer that is diffused into the upper surface of the substrate layer. To manage stress within the wafer, the epitaxial base is doped with germanium.

Career Highlights

Gary W. Gladish has made significant strides in his career, particularly through his work at Fab-Tech Incorporated. His expertise in high voltage devices has positioned him as a key figure in the industry. His innovative methods have paved the way for advancements in electrical device manufacturing.

Collaborations

Gary has collaborated with various professionals in his field, including his coworker Roman J. Hamerski. Their combined efforts have led to the development of cutting-edge technologies in electrical engineering.

Conclusion

In summary, Gary W. Gladish is a notable inventor whose contributions to high voltage electrical devices have made a lasting impact. His innovative patent and work at Fab-Tech Incorporated highlight his dedication to advancing technology in this field.