Fab-Tech Incorporated

Gary W Gladish

Roman J Hamerski

A high voltage electrical device ( ), having a substrate layer ( ), base layer ( ) and top layer ( ), provides high voltage properties in excess of 1000V. Slicing a wafer ( ) from an ingot ( ) created in by monocrystalline growth forms the substrate layer ( ), and this high quality crystal is used as the high resistivity layer in the device ( ). The base layer ( ) is a highly doped, low resistivity, epitaxial layer deposited on the lower surface ( ) of the substrate layer ( ) at a fast rate greater than approximately 2 microns/minute. The top layer ( ) is a diffusion layer diffused into an upper surface ( ) of the substrate layer ( ). To control stress in the wafer ( ), the epitaxial base is doped with germanium.

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Lake Winnebago, MO, United States of America

Gary W Gladish