The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2004
Filed:
Aug. 29, 2002
Walter R. Buchanan, Olathe, KS (US);
Roman J. Hamerski, Olathe, KS (US);
Fabtech, Inc., Lee's Summit, MO (US);
Abstract
An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high resistivity layer utilized to reduce reverse leakage current. The low resistivity layer can be an N material while the high resistivity layer can be an N layer. The buried dopant region can be of P material, thus forming a PN junction with an associated charge depletion zone in the N layer and an associated low reverse leakage current. The location of the P material allows for a full Schottky barrier between the N material and a barrier metal to be maintained, thus the device experiences a low forward voltage drop.