Bernau am Chiemsee, Germany

Roland Daniel Rosezin

USPTO Granted Patents = 2 

 

Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Bernau, DE (2013)
  • Bernau am Chiemsee, DE (2015)

Company Filing History:


Years Active: 2013-2015

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2 patents (USPTO):Explore Patents

Title: Roland Daniel Rosezin: Innovator in Memory Technology

Introduction

Roland Daniel Rosezin is a notable inventor based in Bernau am Chiemsee, Germany. He has made significant contributions to the field of memory technology, holding 2 patents that showcase his innovative approaches to reading and operating memory elements.

Latest Patents

One of his latest patents is a method for nondestructively reading resistive memory elements. This method involves a series connection of at least two memory cells, each having stable states with differing electrical resistances. By measuring an electrical variable of the series circuit, the method allows for distinguishing between different state combinations without changing the logic state of the memory element during reading. Another patent focuses on a memory element, a stack, and a memory matrix, detailing a method for operating the memory matrix and determining the true value of logic operations in an array of memory elements. This memory element can be transferred into high-impedance states and exhibits different electrical resistance values when read, enabling complex logic operations.

Career Highlights

Throughout his career, Roland has worked with esteemed organizations such as Forschungszentrum Jülich GmbH and RWTH Aachen University. His work in these institutions has contributed to advancements in memory technology and its applications.

Collaborations

He has collaborated with notable colleagues, including Eike Linn and Rainer M. Waser, further enhancing the impact of his research and innovations.

Conclusion

Roland Daniel Rosezin's contributions to memory technology through his patents and collaborations highlight his role as a significant innovator in the field. His work continues to influence advancements in memory elements and their applications.

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