Forschungszentrum Juelich Gmbh

Rheinisch-Westfaelische Technische Hochschule Aachen (Rwth)

Rheinish-Westfaelische Technische Hochschule Aachen (Rwth)

Forschungszentrum Julich Gmbh

Rheinisch-Westfalische Technische Hochschule Aachen

Roland Daniel Rosezin

Rainer M Waser

Eike Linn

Rainer Bruchhaus

Ilia Valov

Stefan Tappertzhofen

Lutz Nielen

Florian Lentz

Carsten Kuegeler

A method for reading out a memory element comprises a series connection. of at least two memory cells A and B each have a stable state A0 or B0 having higher resistance and a stable state A1 or B1 having lower electrical resistance. An electrical variable of the series circuit is measured and an electrical variable is selected for this measurement, to which the memory cell A in state A0 makes a different contribution than the memory cell B in state B0 and/or to which the memory cell A instate A1 makes a different contribution than the memory cell B in state B1. The two state combinations A1 and B0 or A0 and B1 then result in differing values for the electrical variable that is measured by way of the series circuit. These state combinations can thus be distinguished from each other without having to change the logic state of the memory element during reading.

Method for nondestructively reading resistive memory elements

Disclosed is a memory element, a stack, and a memory matrix in which the memory element can be used. Also disclosed is a method for operating the memory matrix, and to a method for determining the true value of a logic operation in an array comprising memory elements. The memory element has at least a first stable state 0 and a second stable state 1. By applying a first write voltage V, this memory element can be transferred into the high-impedance state 0 and by applying a second write voltage V, it can be transferred into the likewise high-impedance state 1. By applying a read voltage V, the magnitude of which is smaller than the write voltages Vand V, the memory element exhibits different electrical resistance values. In the parasitic current paths occurring in a memory matrix, the memory element acts as a high-impedance resistor, without in principle being limited to unipolar switching. A method has been disclosed, using an array comprising the memory elements which can be turned into a gate for arbitrary logic operations.

Memory element, stacking, memory matrix and method for operation

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Bernau am Chiemsee, Germany

Roland Daniel Rosezin