Robert Katz

Title: The Innovations of Robert Katz

Introduction

Robert Katz is an accomplished inventor based in Hopewell Junction, NY (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of charge trap memory devices. His innovative work has led to the granting of a patent that showcases his expertise and creativity in this area.

Latest Patents

Robert Katz holds a patent for charge trap memory devices. The present disclosure generally relates to semiconductor structures and, more particularly, to charge trap memory devices and methods of manufacture and operation. The semiconductor memory includes a charge trap transistor comprising a gate structure, a source region, and a drain region. Additionally, it features a self-heating circuit that selectively applies an alternating bias direction between the source region and the drain region of the charge trap transistor to provide an erase operation or a programming operation of the charge trap transistor. This patent highlights his innovative approach to enhancing memory technology.

Career Highlights

Robert Katz is currently employed at Globalfoundries U.S. Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in advancing the capabilities of memory devices, making them more efficient and reliable. With a patent to his name, he has established himself as a key player in the industry.

Collaborations

Robert has collaborated with talented individuals such as Faraz Khan and Dan Moy. These partnerships have allowed him to leverage diverse expertise and drive innovation in his projects.

Conclusion

In summary, Robert Katz is a notable inventor whose work in charge trap memory devices has made a significant impact in the semiconductor industry. His contributions continue to shape the future of memory technology.