Tokyo, Japan

Rina Ogasawara

USPTO Granted Patents = 6 

Average Co-Inventor Count = 2.9

ph-index = 1

Forward Citations = 3(Granted Patents)


Location History:

  • Chiyoda-ku, KR (2019)
  • Chiyoda-ku, JP (2020 - 2021)
  • Tokyo, JP (2019 - 2022)

Company Filing History:


Years Active: 2019-2022

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6 patents (USPTO):Explore Patents

Title: Rina Ogasawara: Innovator in Pressure Sensor Technology

Introduction

Rina Ogasawara is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of pressure sensor technology, holding a total of 6 patents. Her work focuses on enhancing measurement accuracy and sensitivity in pressure sensors, which are crucial in various industrial applications.

Latest Patents

Among her latest innovations is a pressure sensor designed to provide high pressure resistance performance and minimal measurement error. This sensor features a diaphragm unit with a multi-layer structure, allowing for independent deformation of thin plate members while maintaining high sensitivity and productivity. Another notable patent involves a pressure sensor that incorporates a semiconductor chip with a strain gauge, enhancing its accuracy and reliability.

Career Highlights

Rina Ogasawara is currently employed at Azbil Corporation, where she continues to develop cutting-edge technologies in pressure sensing. Her expertise and innovative approach have positioned her as a leader in her field.

Collaborations

Throughout her career, Rina has collaborated with talented individuals such as Yuki Seto and Yoshiyuki Ishikura. These partnerships have fostered a creative environment that encourages the development of advanced technologies.

Conclusion

Rina Ogasawara's contributions to pressure sensor technology exemplify her dedication to innovation and excellence. Her patents reflect a commitment to improving measurement accuracy and sensitivity, making her a key figure in the industry.

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