The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2020

Filed:

Dec. 15, 2016
Applicant:

Azbil Corporation, Chiyoda-ku, JP;

Inventors:

Yuki Seto, Chiyoda-ku, JP;

Masayuki Yoneda, Chiyoda-ku, JP;

Yoshiyuki Ishikura, Chiyoda-ku, JP;

Tomohisa Tokuda, Chiyoda-ku, JP;

Rina Ogasawara, Chiyoda-ku, JP;

Assignee:

AZBIL CORPORATION, Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L 9/00 (2006.01); G01L 7/08 (2006.01); G01L 1/22 (2006.01);
U.S. Cl.
CPC ...
G01L 9/0054 (2013.01); G01L 7/082 (2013.01); G01L 1/2218 (2013.01); G01L 2009/0069 (2013.01);
Abstract

A pressure sensor according to the present invention includes a diaphragm () including a first principal surface (A) and a second principal surface (B) that is opposite thereto, the first principal surface receiving a pressure of a fluid; a semiconductor chip () provided with resistors that constitute a strain gauge; and at least three support members () made of an insulating material, each support member being fixed to the second principal surface at one end thereof and to the semiconductor chip at the other end thereof and extending perpendicularly to the second principal surface so as to support the semiconductor chip. One of the support members () is provided at a center () of the diaphragm in plan view. At least two of the other support members () are provided at positions point-symmetrical about the center of the diaphragm in plan view in a region in which the diaphragm is deformed when a pressure greater than a pressure applied to the second principal surface is applied to the first principal surface.


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