Company Filing History:
Years Active: 2024-2025
Title: Rimpei Kindaichi: Innovator in SiC Technology
Introduction
Rimpei Kindaichi is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of silicon carbide (SiC) materials. With a total of three patents to his name, Kindaichi is recognized for his innovative approaches to enhancing the performance of SiC substrates and epitaxial wafers.
Latest Patents
Kindaichi's latest patents include a SiC epitaxial wafer that features a SiC substrate and a SiC epitaxial layer. This wafer is designed with a diameter of 195 mm or more, and it maintains a warp of 50 μm or less. Another significant patent involves a SiC substrate that has a warpage factor F of 300 μm or less. This factor is determined by the thickness, diameter, and stress at a specific point on the substrate, showcasing Kindaichi's attention to detail and precision in his inventions.
Career Highlights
Kindaichi is currently employed at Resonac Corporation, where he continues to push the boundaries of SiC technology. His work has been instrumental in advancing the applications of SiC materials in various industries, including electronics and power devices. His innovative spirit and technical expertise have earned him recognition among his peers.
Collaborations
Kindaichi collaborates with talented individuals such as Hiromasa Suo and Tamotsu Yamashita. Together, they contribute to the ongoing research and development efforts at Resonac Corporation, fostering a collaborative environment that encourages innovation.
Conclusion
Rimpei Kindaichi stands out as a prominent inventor in the field of SiC technology. His patents reflect his commitment to advancing semiconductor materials, and his work continues to influence the industry. Kindaichi's contributions are a testament to the importance of innovation in technology.