The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 09, 2024

Filed:

May. 02, 2023
Applicant:

Resonac Corporation, Tokyo, JP;

Inventors:

Hiromasa Suo, Tokyo, JP;

Rimpei Kindaichi, Tokyo, JP;

Tamotsu Yamashita, Tokyo, JP;

Assignee:

Resonac Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01);
Abstract

In a SiC substrate of the present invention, in a case where a point 10 mm inside from an outer peripheral edge in a [11-20] direction from a center is defined as a first outer peripheral point and any point within a circle having a diameter of 10 mm from the center is defined as a first center point, the tensile stress of the first outer peripheral point in a <1-100> direction, which is a circumferential direction of the first outer peripheral point, is larger than the tensile stress of the first center point in the <1-100> direction, which is the same direction as the circumferential direction of the first outer peripheral point.


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