Ichihara, Japan

Hiromasa Suo

USPTO Granted Patents = 8 

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Tokyo, JP (2024)
  • Ichihara, JP (2024)

Company Filing History:


Years Active: 2024-2025

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8 patents (USPTO):Explore Patents

Title: **Hiromasa Suo: Pioneering Innovations in SiC Technology**

Introduction

Hiromasa Suo, an accomplished inventor based in Ichihara, Japan, has made significant contributions to the field of silicon carbide (SiC) technology. With a remarkable portfolio of eight patents, Suo's work focuses on the advancement of SiC substrates and wafers, which play a crucial role in various electronic applications.

Latest Patents

Suo's latest innovations include two notable patents that enhance the performance of SiC materials. The first patent relates to a SiC substrate designed with an inner peripheral support surface that maintains a bow of less than 40 μm while ensuring structural integrity. This substrate is particularly beneficial in improving the manufacturing processes for high-performance electronic devices.

The second patent addresses the resistivity characteristics of SiC substrates and ingots. By measuring resistivities at various points within the substrate, Suo has established a standard where the difference between the maximum and minimum resistivity is maintained at 0.5 mΩ·cm or less. This innovation, with a diameter of 149 mm or more, is vital for optimizing the efficiency of semiconductor components.

Career Highlights

Hiromasa Suo's career is marked by his dedication to research and development in SiC technology. As part of Resonac Corporation, he collaborates with a team of skilled professionals aiming to push the boundaries of semiconductor materials. His innovative approach has positioned him as a leader in the field, particularly in the development of high-quality SiC wafers.

Collaborations

Suo works alongside talented coworkers, including Masato Ito and Rimpei Kindaichi, who share his vision for advancing SiC applications. Their collaborative efforts have led to pioneering developments that enhance the performance and reliability of electronic components, making them invaluable assets to Resonac Corporation.

Conclusion

Hiromasa Suo's contributions to SiC technology exemplify his dedication to innovation and excellence. With an impressive number of patents and a strong collaborative spirit, Suo continues to influence the electronics industry positively. His work at Resonac Corporation highlights the importance of research in driving forward technological advancements that benefit various applications.

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