The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2024
Filed:
Feb. 27, 2023
Applicant:
Resonac Corporation, Tokyo, JP;
Inventors:
Hiromasa Suo, Ichihara, JP;
Rimpei Kindaichi, Yokohama, JP;
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/66 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/67288 (2013.01); H01L 22/12 (2013.01);
Abstract
The SiC substrate has a warpage factor F of 300 μm or less, which is obtained from the thickness, the diameter, and a stress at a first outer circumferential end 10 mm inward from an outer circumferential end in the [11-20] direction from a center thereof.