The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Nov. 29, 2023
Applicant:
Resonac Corporation, Tokyo, JP;
Inventors:
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01);
Abstract
A SiC epitaxial wafer including: a SiC substrate; and a SiC epitaxial layer stacked on one surface of the SiC substrate, wherein a diameter of the SiC substrate is 195 mm or more, and a warp is 50 μm or less.
Quick Actions:
Suo, Hiromasa. (2025). Sic epitaxial wafer (U.S. Patent No. 12215439). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12215439
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