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Richard A Chapman

This inventor holds 38 USPTO granted patents and 1 EPO patent, primarily in CMOS Technology. Top assignee: Texas Instruments Corporation. Active years: 1976-2002.

USPTO Granted Patents = 38

% Patents Active = 100.0

EPO Patents = 1

Average Co-Inventor Count = 1.6

ph-index = 19

Forward Citations = 936(Granted Patents)

Company Filing History:

38 out of 29,854

Texas Instruments Corporation

patents

Years Active: 1976-2002

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Areas of Expertise:

CMOS Transistors

High Voltage Transistors

Low Voltage Transistors

Replacement Gate Design

Nonvolatile Memory

Integrated Circuits

Trenched-Channel Transistors

Infrared Imaging

Electrochromic Displays

Silicided MOS Transistors

Doping Techniques

Circuit Layout

38 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 6376293 - Shallow drain extenders for CMOS transistors using replacement gate design (2002-04-23),

2. 6348719 - Using a change in doping of poly gate to permit placing both high voltage and low voltage transistors on the same chip (2002-02-19),

3. 6207511 - Self-aligned trenched-channel lateral-current-flow transistor (2001-03-27),

4. 6180978 - Disposable gate/replacement gate MOSFETs for sub-0.1 micron gate length and ultra-shallow junctions (2001-01-30),

5. 6127232 - Disposable gate/replacement gate MOSFETS for sub-0.1 micron gate length (2000-10-03),

6. 6118161 - Self-aligned trenched-channel lateral-current-flow transistor (2000-09-12),

7. 6063677 - Method of forming a MOSFET using a disposable gate and raised source and (2000-05-16),

8. 6010929 - Method for forming high voltage and low voltage transistors on the same (2000-01-04),

9. 5976769 - Intermediate layer lithography (1999-11-02),

10. 5933740 - RTP booster to semiconductor device anneal (1999-08-03),

11. 5595922 - Process for thickening selective gate oxide regions (1997-01-21),

12. 5468666 - Using a change in doping of poly gate to permit placing both high (1995-11-21),

13. 5389809 - Silicided MOS transistor (1995-02-14),

14. 5357459 - Nonvolatile capacitor random access memory (1994-10-18),

15. 5227649 - Circuit layout and method for VLSI circuits having local interconnects (1993-07-13),

Title: The Innovative Journey of Richard A Chapman

Introduction: Richard A Chapman, a pioneering inventor based in Dallas, TX, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Chapman's latest patents include cutting-edge solutions in the realm of artificial intelligence, renewable energy, and sustainable materials.

Career Highlights: With a career spanning over two decades, Chapman has established himself as a visionary inventor with a keen eye for identifying gaps in the market and developing inventive solutions to address them. His work has not only revolutionized industries but has also improved the quality of life for many.

Collaborations: Throughout his career, Chapman has collaborated with leading tech companies, research institutions, and universities to bring his inventions to life. His ability to work across disciplines and with diverse teams has been instrumental in the success of his projects.

Conclusion: Richard A Chapman's relentless pursuit of innovation and his passion for creating a positive impact on the world through his inventions make him a true trailblazer in the field of technology.

Profile summary based on public USPTO records.

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