The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2002
Filed:
Aug. 14, 1996
Applicant:
Inventor:
Richard A. Chapman, Dallas, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A semiconductor device having high and low voltage transistors on the same chip. High voltage NMOS transistor comprises a polysilicon gate doped at first dopant level. Low voltage NMOS transistor comprises a polysilicon gate doped at a second dopant level. The second dopant level is higher than the first. High voltage PMOS transistor comprises a polysilicon gate doped at a third dopant level. Low voltage PMOS transistor comprises a polysilicon gate doped at a fourth dopant level. The fourth dopant level is higher than the third.