Randy A Rusch

Title: Randy A. Rusch: Innovator in EPROM Technology

Introduction

Randy A. Rusch, a talented inventor from Kokomo, IN, has made significant contributions to the field of high-density CMOS integrated circuits. With a total of 11 patents, he has developed groundbreaking methods that enhance the functionality and efficiency of EPROM transistors.

Latest Patents

Rusch's recent innovations include two noteworthy patents focused on EPROM technology. The first, titled "EPROM in high density CMOS having added substrate diffusion," describes a method for creating an EPROM transistor that utilizes substrate to gate electrode material capacitors. This design allows the EPROM transistor to be programmed at low voltages, suitable for high-density CMOS transistors. The second patent, "Method of making EPROM in high density CMOS having metallization," outlines a similar approach but incorporates gate electrode to metallization capacitors. Like the first, this EPROM transistor is also programmable at low voltages, showcasing Rusch's inventive prowess in optimizing CMOS technology.

Career Highlights

Throughout his career, Rusch has been associated with notable organizations such as Delco Electronics Corporation and GM Global Technology Operations LLC. His work in these companies has paved the way for advancements in integrated circuit technology, further establishing his reputation as an expert in the field.

Collaborations

Randy A. Rusch has collaborated with numerous professionals during his career, including coworkers John Robert Schlais and John R. Schlais. These collaborations have undoubtedly contributed to the innovative spirit that drives his work.

Conclusion

Randy A. Rusch's dedication to innovation in the realm of EPROM technology is evident through his impressive array of patents and career achievements. As he continues to push the boundaries of high-density CMOS integrated circuits, Rusch not only enhances the industry but also inspires future inventors.