The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 19, 1999

Filed:

Nov. 03, 1997
Applicant:
Inventors:

John Robert Schlais, Gurnee, IL (US);

Randy Alan Rusch, Kokomo, IN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257315 ; 257296 ; 257317 ; 257321 ; 257390 ; 438257 ; 438261 ; 438264 ; 438265 ; 36518514 ; 36518515 ;
Abstract

A method of making an EPROM transistor in a high density CMOS integrated circuit having a substrate to gate electrode material capacitor. The EPROM transistor is made using only the steps used to make the other components of the high density CMOS integrated circuit. The EPROM transistor is programmable at low voltages which high density CMOS transistors can handle.


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