Garland, TX, United States of America

Rajni J Aggarwal

This inventor holds 19 USPTO granted patents and 5 published patent applications, primarily in CMOS Technology. Top assignee: Texas Instruments Corporation. Active years: 1994-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rajni J Aggarwal. Retrieved from https://idiyas.com/inventor/rajni-j-aggarwal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 4

Forward Citations = 46(Granted Patents)


Location History:

  • Somerville, MA (US) (1994)
  • Garland, TX (US) (2011 - 2024)

Company Filing History:


Years Active: 1994-2025

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Areas of Expertise:
Silicon Dislocation
Deep Trench Isolation
Hall Sensor
Transistor Matching
Bipolar Device
Signal to Noise
Stressor Structures
High Sheet Resistor
Fluorine Implant
Electrical Test Structure
Shannon Cell Circuits
19 patents (USPTO):Explore Patents

Title: Rajni J Aggarwal: A Trailblazing Inventor Revolutionizing Electronics

Introduction:

Rajni J Aggarwal, a visionary inventor based in Garland, Texas, is renowned for her unwavering commitment to innovation and her relentless pursuit of pioneering solutions in the field of electronics. With a remarkable portfolio of 18 patents to her name, Rajni's groundbreaking work has solidified her position as a prominent figure in the realm of inventions, inspiring future generations to push the boundaries of what is deemed achievable.

Latest Patents:

1. **Deep trench isolation with field oxide**: Rajni's cutting-edge electronic device features a semiconductor substrate with majority carrier dopants, a semiconductor surface layer with field oxide, and an isolation structure comprising a trench filled with polysilicon. This innovative design showcases Rajni's expertise in developing advanced semiconductor technologies.

2. **Hall sensor with buried hall plate**: In this patent, Rajni introduces a CMOS integrated circuit housing a Hall sensor with a Hall plate situated in a first isolation layer concurrent with a second isolation layer underneath a MOS transistor. The incorporation of horizontal and vertical Hall sensors highlights Rajni's versatility in creating diverse solutions for sensing magnetic fields.

Career Highlights:

Rajni J Aggarwal currently thrives as a key member of the technological powerhouse, Texas Instruments Corporation. Her impactful contributions and groundbreaking inventions have significantly propelled the company's position at the forefront of innovation in the electronics industry. Rajni's exemplary work ethic and passion for creating transformative solutions have garnered her widespread recognition and acclaim within the field.

Collaborations:

Throughout her illustrious career, Rajni has collaborated closely with esteemed colleagues such as Jau-Yuann Yang and YuGuo Wang. Together, they have synergistically combined their expertise to drive forward cutting-edge research and development initiatives, leading to the successful realization of groundbreaking inventions that have revolutionized the electronics landscape.

Conclusion:

In conclusion, Rajni J Aggarwal stands as a beacon of innovation, pushing the boundaries of what is possible in the field of electronics. Her exceptional talent, tireless dedication, and passion for creating solutions that make a tangible difference exemplify her as a trailblazing inventor whose impact will continue to inspire and shape the landscape of inventions for generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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