The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 10, 2024

Filed:

Aug. 31, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Abbas Ali, Plano, TX (US);

Rajni J. Aggarwal, Garland, TX (US);

Steven J. Adler, Plano, TX (US);

Eugene C. Davis, McKinney, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/761 (2006.01); H01L 21/762 (2006.01); H01L 21/763 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0649 (2013.01); H01L 21/26513 (2013.01); H01L 21/76286 (2013.01); H01L 21/763 (2013.01); H01L 21/761 (2013.01);
Abstract

An electronic device comprises a semiconductor substrate including majority carrier dopants of a first conductivity type, a semiconductor surface layer including majority carrier dopants of a second conductivity type, field oxide that extends on the semiconductor surface layer, and an isolation structure. The isolation structure includes a trench that extends through the semiconductor surface layer and into one of the semiconductor substrate and a buried layer of the semiconductor substrate, and polysilicon including majority carrier dopants of the second conductivity type, the polysilicon fills the trench to a side of the semiconductor surface layer.


Find Patent Forward Citations

Loading…