Austin, TX, United States of America

Rajan Nagabushnam

This inventor holds 6 USPTO granted patents. Top assignee: Motorola Corporation. Active years: 1999-2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rajan Nagabushnam. Retrieved from https://idiyas.com/inventor/rajan-nagabushnam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 5

Forward Citations = 88(Granted Patents)


Company Filing History:


Years Active: 1999-2001

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6 patents (USPTO):Explore Patents

Title: Rajan Nagabushnam: Innovator in Semiconductor Technology

Introduction

Rajan Nagabushnam is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor technology. With a total of 6 patents, he has made remarkable advancements in the field, particularly in the development of innovative methods for semiconductor devices.

Latest Patents

Among his latest patents is a method for forming a tensile plasma enhanced nitride capping layer over a gate electrode. This process involves creating a tensile stress layer over a conductive gate stack on a semiconductor substrate. Following the formation of the conductive gate stack, an anneal is performed to enhance its properties. The conductive gate stack includes a metal layer that prevents outgassing and poly depletion during the anneal process. Additionally, a photoresist layer is formed and patterned to create a gate.

Another notable patent is a method for making a semiconductor device. This process begins with the formation of source and drain regions and a gate electrode. Silicon nitride spacers are then formed adjacent to the gate electrode. A cobalt layer and an overlying titanium layer are deposited in contact with the regions. A rapid thermal process is employed to react the titanium, cobalt, and silicon together, resulting in the formation of silicide regions and intermetallic compound layers. The final structure features a nitride spacer and field oxide regions that are free from cobalt residual contamination.

Career Highlights

Rajan Nagabushnam has built a successful career at Motorola Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to significant improvements in device performance and reliability.

Collaborations

Throughout his career, Rajan has collaborated with talented individuals such as Subramoney V Iyer and Olubunmi O Adetutu. These collaborations have fostered a creative environment that has contributed to the development of cutting-edge technologies.

Conclusion

Rajan Nagabushnam's contributions to semiconductor technology through his patents and work at Motorola Corporation highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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