This inventor holds 6 USPTO granted patents. Top assignee: Motorola Corporation. Active years: 1999-2001.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 1999-2001
Title: Rajan Nagabushnam: Innovator in Semiconductor Technology
Introduction
Rajan Nagabushnam is a prominent inventor based in Austin, TX, known for his significant contributions to semiconductor technology. With a total of 6 patents, he has made remarkable advancements in the field, particularly in the development of innovative methods for semiconductor devices.
Latest Patents
Among his latest patents is a method for forming a tensile plasma enhanced nitride capping layer over a gate electrode. This process involves creating a tensile stress layer over a conductive gate stack on a semiconductor substrate. Following the formation of the conductive gate stack, an anneal is performed to enhance its properties. The conductive gate stack includes a metal layer that prevents outgassing and poly depletion during the anneal process. Additionally, a photoresist layer is formed and patterned to create a gate.
Another notable patent is a method for making a semiconductor device. This process begins with the formation of source and drain regions and a gate electrode. Silicon nitride spacers are then formed adjacent to the gate electrode. A cobalt layer and an overlying titanium layer are deposited in contact with the regions. A rapid thermal process is employed to react the titanium, cobalt, and silicon together, resulting in the formation of silicide regions and intermetallic compound layers. The final structure features a nitride spacer and field oxide regions that are free from cobalt residual contamination.
Career Highlights
Rajan Nagabushnam has built a successful career at Motorola Corporation, where he has been instrumental in advancing semiconductor technologies. His innovative approaches have led to significant improvements in device performance and reliability.
Collaborations
Throughout his career, Rajan has collaborated with talented individuals such as Subramoney V Iyer and Olubunmi O Adetutu. These collaborations have fostered a creative environment that has contributed to the development of cutting-edge technologies.
Conclusion
Rajan Nagabushnam's contributions to semiconductor technology through his patents and work at Motorola Corporation highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
