The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Jan. 20, 1998
Rajan Nagabushnam, Austin, TX (US);
Motorola, Inc., Schaumburg, IL (US);
Abstract
A process for forming a silicided MOS transistor (,) begins by providing source and drain regions (,) and (,) and a gate electrode (,). Silicon nitride spacers (,) are formed adjacent the gate electrode (,). A cobalt layer (,) and an overlying titanium layer (,) are then deposited in contact with the regions (,), (,), and (,). A rapid thermal process (,) is then used to react the titanium, cobalt, and silicon together to form silicide regions (,), (,), and (,), and intermetallic compound layers (,) and (,). The intermetallic compound layers (,) and (,) are then etched using two sequentially-performed wet etch steps (,) and (,). The resulting structure (,) has a nitride spacer (,) and field oxide regions (,) which are free from cobalt residual contamination (,).