The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2001
Filed:
Nov. 24, 1997
Applicant:
Inventors:
Rajan Nagabushnam, Austin, TX (US);
Stanley M. Filipiak, Pflugerville, TX (US);
Bruce Boeck, Austin, TX (US);
Assignee:
Motorola Inc., Schaumburg, IL (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/13205 ; H01L 2/14763 ;
Abstract
A tPEN layer (,) having a tensile stress is formed over a conductive gate stack (,) provided on a semiconductor substrate. Following the formation of the conductive gate stack (,), an anneal is performed. The conductive gate stack includes a metal layer to prevent outgassing and poly depletion during the anneal. Next, a photoresist layer (,) is formed and patterned to form a gate (,).