The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2000

Filed:

Jul. 15, 1999
Applicant:
Inventors:

Rajan Nagabushnam, Austin, TX (US);

Subramoney V Iyer, Austin, TX (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B / ;
U.S. Cl.
CPC ...
451 41 ; 451285 ; 451 59 ; 451287 ; 451165 ; 451274 ;
Abstract

Vibrating and oscillating rates can be dynamically changed during polishing to achieve an optimal polishing process. A semiconductor device substrate (34) has a first layer with a first film (12) and a second film (10) that overlies the first film (12), where the first film (12) is harder and underlies the second film (10). In one embodiment, the substrate (34) is placed over a first region (66) of a polishing pad (60). The second film (10) is polished at a first vibrating and oscillating rates over the first region (66). An endpoint signal is received when the first film (12) is reached. The substrate (34) is moved to a second region (62) of the polishing pad (60) that is closer to the edge of the pad and has a higher feature density compared to the first region (66). Polishing is performed at a second vibrating and oscillating rates that are different from the first vibrating and oscillating rates to remove the first film (10).


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