Austin, TX, United States of America

Raghu Gupta


Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2019-2020

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2 patents (USPTO):

Title: Raghu Gupta: Innovator in Power MOSFET Technology

Introduction

Raghu Gupta is a notable inventor based in Austin, TX, who has made significant contributions to the field of semiconductor technology. With a focus on power MOSFET structures, he has developed innovative solutions that enhance the efficiency and functionality of electronic devices. His work is characterized by a commitment to advancing technology through inventive designs.

Latest Patents

Raghu Gupta holds 2 patents, with his latest invention being a bidirectional power MOSFET structure featuring a cathode short structure. This field effect device includes a semiconductor body that separates a source and a drain, both of which are coupled to the semiconductor body. An insulated control gate is positioned over the semiconductor body, between the source and drain, and is designed to control a conductive channel that extends between them. The invention also incorporates first and second doped regions, such as highly-doped regions, adjacent to the source. One of these doped regions may serve as a cathode short region, electrically connected to the source, which can be utilized in a bidirectional power MOSFET.

Career Highlights

Raghu Gupta is currently employed at NXP USA, Inc., where he continues to innovate and develop cutting-edge technologies in the semiconductor industry. His expertise in power MOSFET structures has positioned him as a key contributor to the company's research and development efforts.

Collaborations

Throughout his career, Raghu has collaborated with talented individuals such as Tanuj Saxena and Vishnu Khemka. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of groundbreaking technologies.

Conclusion

Raghu Gupta's contributions to the field of semiconductor technology, particularly in the area of power MOSFET structures, highlight his innovative spirit and dedication to advancing electronic device efficiency. His work continues to influence the industry and inspire future innovations.

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