Nxp Usa, Inc.

Raghu Gupta

Vishnu Khemka

Moaniss Zitouni

Ganming Qin

Tanuj Saxena

A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated control gate is located over the semiconductor body between the source and drain and configured to control a conductive channel extending between the source and drain. First and second doped regions such as highly-doped regions are adjacent to the source. The first or second doped region may be a cathode short region electrically coupled to the source. The cathode short region may be used in a bidirectional power MOSFET.

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Austin, TX, United States of America

Raghu Gupta