The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Sep. 29, 2017
Nxp Usa, Inc., Austin, TX (US);
Tanuj Saxena, Tempe, AZ (US);
Vishnu K. Khemka, Chandler, AZ (US);
Raghu Gupta, Austin, TX (US);
Moaniss Zitouni, Gilbert, AZ (US);
Ganming Qin, Chandler, AZ (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A field effect device includes a semiconductor body separating a source and a drain, both source and drain coupled to the semiconductor body. An insulated control gate is located over the semiconductor body between the source and drain and configured to control a conductive channel extending between the source and drain. First and second doped regions such as highly-doped regions are adjacent to the source. The first or second doped region may be a cathode short region electrically coupled to the source. The cathode short region may be used in a bidirectional power MOSFET.