logo

For the Inventor, By the Inventor

Austin, TX, United States of America

Raghaw S Rai

This inventor holds 2 USPTO granted patents. Top assignee: Freescale Semiconductor,inc.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Raghaw S Rai. Retrieved from https://idiyas.com/inventor/raghaw-s-rai

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2

% Patents Active = 50.0

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:

goldMedal2 out of 5,491 
 
Freescale Semiconductor,inc.
 patents

Years Active: 2009

Loading Chart...
2 patents (USPTO):Explore Patents
1. 7611936 - Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method (2009-11-03),
2. 7563700 - Method for improving self-aligned silicide extendibility with spacer recess using an aggregated spacer recess etch (ASRE) integration (2009-07-21),

Title: The Innovative Journey of Raghaw S Rai

Introduction: Raghaw S Rai, a talented inventor based in Austin, TX, has made significant contributions to the field of technology with his creative solutions and groundbreaking ideas.

Latest Patents: Raghaw S Rai holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a background in engineering and a passion for problem-solving, Raghaw S Rai has successfully brought several inventions from concept to reality, revolutionizing industries and improving people's lives.

Collaborations: Throughout his career, Raghaw S Rai has collaborated with leading research institutions, universities, and tech companies to further develop his inventions and bring them to the market, demonstrating his ability to work effectively in multidisciplinary teams.

Conclusion: Raghaw S Rai's dedication to innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors, inspiring others to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…