Freescale Semiconductor,inc.

Raghaw S Rai

Mark Douglas Hall

Leo Mathew

Ross Edward Noble

Anadi Srivastava

Jesse Yanez

A method for depositing metals on surfaces is provided which comprises (a) providing a substrate () having a horizontal surface () and a vertical surface (); (b) depositing a first metal layer () over the horizontal and vertical surfaces; (c) depositing a layer of polysilicon () over the horizontal and vertical surfaces; (d) treating the layer of polysilicon with a plasma such that a residue () remaining from the treatment is preferentially formed over the horizontal surfaces rather than the vertical surfaces, and wherein the residue is resistant to a first metal etch; and (e) exposing the substrate to the first metal etch.

Method to control uniformity/composition of metal electrodes, silicides on topography and devices using this method

A method is provided for making a silicided gate (). In accordance with the method, a semiconductor structure () is provided which comprises a semiconductor substrate (), a gate () disposed on the semiconductor substrate, and a spacer () adjacent to the gate. The structure is subjected to a first etch which exposes a first lateral portion of the gate. An implant () is then created in a region adjacent to the spacer. The structure is then subjected to a second etch which exposes a second lateral portion of the gate electrode, and a layer of silicide () is formed which extends over the first and second lateral portions of the gate.

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Austin, TX, United States of America

Raghaw S Rai