Company Filing History:
Years Active: 2015-2025
Title: Innovations of Quanbo Li in Semiconductor Technology
Introduction
Quanbo Li is a prominent inventor based in Shanghai, China, known for his contributions to semiconductor technology. He holds a total of 4 patents that focus on improving the performance and manufacturing processes of semiconductor devices. His work has significantly impacted the field, particularly in the area of silicon epitaxy and surface treatment processes.
Latest Patents
One of Quanbo Li's latest patents is titled "Method for making silicon epitaxy of a FDSOI device." This patent describes a method that involves several steps, including providing a semiconductor structure, forming etch stop layers, and enabling a silicon substrate to epitaxially grow upwards. This innovative approach aims to enhance the efficiency of FDSOI devices.
Another notable patent is "Methods and systems for using oxidation layers to improve device surface uniformity." This invention outlines a treatment process for semiconductors that includes forming an oxidation layer to eliminate surface defects. The process significantly improves the performance of semiconductor devices by ensuring a treated trench surface is free from defects.
Career Highlights
Quanbo Li has worked with leading companies in the semiconductor industry, including Shanghai Huali Microelectronics Corporation and Shanghai Huali Integrated Circuit Corporation. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor manufacturing.
Collaborations
Throughout his career, Quanbo Li has collaborated with notable professionals in the field, including Jun Huang and Xiangguo Meng. These collaborations have contributed to the advancement of semiconductor technologies and have fostered a culture of innovation.
Conclusion
Quanbo Li's contributions to semiconductor technology through his patents and career achievements highlight his role as a significant inventor in the industry. His innovative methods continue to influence the development of advanced semiconductor devices.