The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2025
Filed:
Sep. 23, 2022
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The present application relates to a method for making silicon epitaxy of a FDSOI device, which includes the following steps: providing a semiconductor structure; sequentially forming a first etch stop layer and an etch reaction layer on a surface of the semiconductor structure; performing an etching operation to the etch reaction layer to form a sidewall structure respectively; filling a second etch stop layer in a space between the sidewall structures at the position of the trench; etching the sidewall structures and the first etch stop layer under the sidewall structures to form a groove structure; removing the second etch stop layer and the remaining first etch stop layer; enabling a silicon substrate at the positions of the trench and the groove structure to epitaxially grow upwards to form epitaxial silicon, the epitaxial silicon being in flush with a top silicon layer.