The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Apr. 20, 2015
Applicant:
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Inventors:
Assignee:
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/0206 (2013.01); H01L 21/02115 (2013.01); H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/31111 (2013.01); H01L 21/31133 (2013.01); H01L 21/76224 (2013.01); H01L 22/26 (2013.01);
Abstract
A process is used to form a protective layer to cover a divot between two regions of a semiconductor material. During etching processes, the protective layer protects the divot to be etched away and reduces material loss of a Silicon (Si)-shallow trench isolation (STI) substrate. A selective coverage is provided to protect the height of the Si-STI substrate and an Si-STI interface. A desirable geometry can be obtained for forming a silicon germanium (SiGe)layer with uniform thickness near the divot.