Zhubei, Taiwan

Qinhai Jin

This inventor holds 6 USPTO granted patents and 1 published patent application. Top assignees: Chip Integration Tech. Co., Ltd., Other. Active years: 2014-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qinhai Jin. Retrieved from https://idiyas.com/inventor/qinhai-jin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 16.7

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:

goldMedal5 out of 12 
 
Chip Integration Tech. Co., Ltd.
 patents
silverMedal2 out of 834,453 
Other
 patents
where one patent can have more than one assignee

Years Active: 2014-2020

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6 patents (USPTO):Explore Patents

Title: Innovator in Semiconductor Technology: Qinhai Jin

Introduction: Qinhai Jin is a prominent inventor hailing from Zhubei, Taiwan, known for his contributions to semiconductor technologies. With a total of six patents to his name, he has made significant advancements in the field, particularly in the development and design of trench vertical double diffused MOS transistors and dual trench rectifiers.

Latest Patents: Among Qinhai Jin’s latest innovations are two notable patents. The first, titled "Structure of Trench-Vertical Double Diffused MOS Transistor and Method of Forming the Same," describes a complex arrangement of trench VDMOS transistors that incorporate an n-epi layer and n+ substrate. This structure features trench gates with a trench oxide layer and a first poly-silicon layer that enhances the MOS structures formed on the mesas. Additionally, it provides a detailed methodology for interconnecting the metal layers for source and gate connections. The second recent patent, "Dual Trench Rectifier and Method for Forming the Same," outlines a dual trench rectifier structure that includes parallel trenches and recesses formed on a substrate. This design optimizes the formation of p-type bodies along with effective metal contacts, thereby streamlining the rectification process.

Career Highlights: Qinhai Jin has worked with notable companies, including Chip Integration Technology Co., Ltd., where he has been able to apply his innovative designs to practical use. His expertise in semiconductor devices has contributed to various advancements in technology, helping to push the boundaries of what is possible in the industry.

Collaborations: Throughout his career, Qinhai Jin has collaborated with various tech firms and research institutions, leveraging partnerships to enhance his research and development endeavors. His ability to work within multidisciplinary teams has facilitated the exploration of new technologies and the improvement of existing ones.

Conclusion: Qinhai Jin is a distinguished inventor whose work in semiconductor technology continues to shape the industry landscape. His innovative patents reflect a deep understanding of electronic component design, positioning him as a leading figure in the realm of semiconductor development. As technology evolves, his contributions will likely influence future innovations in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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