The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Jun. 22, 2015
Chip Integration Tech. Co., Ltd., Zhubei, Hsinchu County, TW;
Qinhai Jin, Zhubei, Hsinchu County, TW;
Qinhai Jin, Zhubei, TW;
CHIP INTEGRATION TECH. CO., LTD., Zhubei, Hsinchu County, TW;
Other;
Abstract
A structure of dual trench rectifier comprises of the following elements. A plurality of trenches are formed parallel in an n− epitaxial layer on an n+ semiconductor substrate and spaced with each other by a mesa. A plurality of recesses are formed on the mesas. Each the trench has a trench oxide layer formed on the sidewalls and bottom thereof, and a first poly silicon layer is filled therein to form MOS structures. Each the recess has a recess oxide layer formed on the sidewalls and bottom thereof, and a second poly silicon layer is filled therein to form MOS structures. A plurality of p type bodies are formed at two sides of the MOS structures in recesses. A top metal is formed above the semiconductor substrate for serving as an anode. A bottom metal is formed beneath the semiconductor substrate for serving as a cathode.