This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Shanghai Ic R&d Center Co., Ltd. Active years: 2016-2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Pudong, CN (2016)
- Shanghai, CN (2016 - 2017)
Company Filing History:
Years Active: 2016-2017
Title: Innovations of Qingyun Zuo
Introduction
Qingyun Zuo is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding three patents to his name. His work focuses on advanced microphone structures and metal film resistor manufacturing methods.
Latest Patents
One of Qingyun Zuo's latest patents is a MEMS microphone structure and method of manufacturing the same. This invention includes a semiconductor substrate with a cavity, a first dielectric layer featuring a through-hole, and a lower diaphragm electrode. The upper electrode structure is designed with an insulating layer, an annular supporter, a back plate with multiple holes, and an upper electrode connection. This innovative design creates an air gap between the back plate and the lower diaphragm electrode, enhancing microphone performance.
Another significant patent is related to a metal film resistor structure and its manufacturing method. This method involves providing an insulation layer on a semiconductor device, forming a lower copper interconnect, and etching a cap layer to create a window. The process includes forming a metal film layer that connects with the lower copper interconnect, followed by a chemical mechanical polishing (CMP) process to finalize the metal film resistor.
Career Highlights
Qingyun Zuo is currently employed at Shanghai IC R&D Center Co., Ltd. His work at this company has allowed him to develop cutting-edge technologies that contribute to the advancement of semiconductor devices. His expertise in this field has positioned him as a key player in innovation.
Collaborations
Qingyun Zuo collaborates with talented individuals such as Xiaoxu Kang and Shaohai Zeng. Their combined efforts in research and development have led to significant advancements in their respective projects.
Conclusion
Qingyun Zuo's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative designs and methods continue to shape the future of electronic devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile