The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Dec. 10, 2013
Shanghai Ic R&d Center Co.,ltd., Shanghai, CN;
SHANGHAI IC R&D CENTER CO., LTD, Shanghai, CN;
Abstract
A MEMS microphone structure, comprising a semiconductor substrate having a cavity, a first dielectric layer having a through-hole communicating with the cavity, a lower diaphragm electrode formed above the through-hole and at least partially attached to the upper surface of the first dielectric layer, and an upper electrode structure with an insulating layer. The upper electrode structure comprises an annular supporter, a back plate having multiple holes, and an upper electrode connection. At least a part of the annular supporter extends downwardly to the lower diaphragm electrode while the rest of the annular supporter extends downwardly to the substrate. The back plate is suspended above the lower diaphragm electrode by the annular supporter, forming an air gap therebetween. An upper electrode is embedded in the insulating layer at the back plate and is lead out by the upper electrode connection.