Hubei, China

Qiang Xu

USPTO Granted Patents = 9 

Average Co-Inventor Count = 5.8

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2020-2025

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9 patents (USPTO):Explore Patents

Title: Innovations by Inventor Qiang Xu in Three-Dimensional Memory Technology

Introduction

Qiang Xu, an accomplished inventor based in Hubei, China, has made significant contributions to the field of memory device technology. With a total of nine patents to his name, Xu's work is primarily centered around cutting-edge three-dimensional memory solutions. His innovative designs aim to enhance data storage efficiency and performance.

Latest Patents

Qiang Xu's most recent patents focus on advanced structures for three-dimensional memory devices. One notable patent describes a method and structure incorporating trench structures that improve the functionality of memory devices. This design features a substrate with multiple wordlines extending in a specific direction, forming a unique staircase structure within designated regions. The memory device includes insulating slits that vary in width, optimizing the interaction between regions.

Another significant patent from Xu outlines a gate line slit structure within a memory device. This innovation includes a substrate and a stack that is divided into portions by the gate line slit, enhancing the overall connection and efficiency of different sub-portions. This intricate design reflects Xu’s commitment to pushing the boundaries of memory technology.

Career Highlights

Qiang Xu is associated with Yangtze Memory Technologies Co., Ltd., a company recognized for its advancements in semiconductor and memory device manufacturing. Throughout his career, Xu has demonstrated a passion for innovation in memory technology, which is evident in his multiple patents. His contributions have positioned him as a notable inventor in the field, striving to create more efficient and advanced memory storage solutions.

Collaborations

During his tenure at Yangtze Memory Technologies, Qiang Xu has collaborated with talented coworkers such as Zongliang Huo and Zhiliang Xia. Their collective efforts in the development of advanced memory technologies have resulted in numerous breakthroughs, showcasing the power of teamwork and shared expertise in driving innovation.

Conclusion

Qiang Xu's work illustrates the crucial role of inventors in the evolution of technology, particularly in the realm of memory devices. With nine patents to his name, his dedication to innovation continues to have a profound impact on the industry. As technology advances, Xu's contributions will likely remain influential as he pushes the frontiers of memory device capabilities.

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