Punit Bhola

Title: Innovations of Inventor Punit Bhola

Introduction

Punit Bhola is an accomplished inventor based in South Portland, ME (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of DMOS transistors. With a total of two patents to his name, Bhola's work showcases his expertise and innovative spirit.

Latest Patents

Punit Bhola's latest patents include a DMOS transistor with a slanted super junction drift structure. This innovative design features a lower on-state drain-to-source resistance and a higher breakdown voltage. The slanted super junction drift structure is strategically positioned along the side wall of an opening, with the drain region located at the bottom and the source region near the top. Another notable patent is for a DMOS transistor with a cavity that lies below the drift region. This lateral DMOS transistor, formed on a silicon-on-insulator (SOI) structure, achieves a higher breakdown voltage due to a cavity formed in the bulk region of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer directly beneath the drift region of the DMOS transistor.

Career Highlights

Throughout his career, Punit Bhola has worked with prominent companies in the semiconductor industry, including National Semiconductor Corporation and Texas Instruments Corporation. His experience in these organizations has contributed to his development as a leading inventor in his field.

Collaborations

Punit Bhola has collaborated with notable professionals such as Peter J Hopper and Alexei Sadovnikov. These collaborations have likely enriched his work and contributed to the advancements in his patents.

Conclusion

Punit Bhola's contributions to semiconductor technology through his innovative patents highlight his expertise and dedication to the field. His work continues to influence advancements in DMOS transistor design and functionality.