National Semiconductor Corporation

Texas Instruments Corporation

Punit Bhola

Peter J Hopper

Vladislav Vashchenko

William David French

Alexei Sadovnikov

Richard Wendell Foote, Jr

Erika Lynn Mazotti

Richard Wendell Foote

A DMOS transistor with a lower on-state drain-to-source resistance and a higher breakdown voltage utilizes a slanted super junction drift structure that lies along the side wall of an opening with the drain region at the bottom of the opening and the source region near the top of the opening.

DMOS transistor with a slanted super junction drift structure

A lateral DMOS transistor formed on a silicon-on-insulator (SOI) structure has a higher breakdown voltage that results from a cavity that is formed in the bulk region of the SOI structure. The cavity exposes a portion of the bottom surface of the insulator layer of the SOI structure that lies directly vertically below the drift region of the DMOS transistor.

DMOS Transistor with a cavity that lies below the drift region

Growing community of inventors

South Portland, ME, United States of America

Punit Bhola