Po-Yuan Chen

Title: **Po-Yuan Chen: Innovator in Metal-Oxide Semiconductor Technologies**

Introduction

Po-Yuan Chen is a prominent inventor based in Kao-Hsiung Hsien, Taiwan, specializing in advancements in metal-oxide semiconductor transistors. With a total of four patents to his name, Chen has made significant contributions to the field, focusing on methods that enhance the functionality and efficiency of semiconductor devices.

Latest Patents

Among his latest innovations, Chen has developed two noteworthy patents for fabricating metal-oxide semiconductor transistors. The first patent outlines a detailed method that begins with providing a semiconductor substrate, followed by the formation of a gate structure. The innovative process includes a first ion implantation step where a molecular cluster composed of carbon, boron, and hydrogen is implanted into the substrate, contributing to the formation of a doped region. Notably, the molecular weight of this cluster is specified to be greater than 100.

His second patent similarly details a method for semiconductor transistor fabrication. In this method, a semiconductor substrate with an existing gate structure is utilized, and a spacer is formed around the gate. An ion implantation process involves the insertion of a molecular cluster, again containing carbon, boron, and hydrogen, at both sides of the spacer, resulting in a doped region. Following this, a millisecond annealing process is employed to activate the molecular cluster within the doped region, paving the way for enhanced performance of the semiconductor devices.

Career Highlights

Chen is currently associated with United Microelectronics Corporation, a leading entity in the semiconductor industry. His expertise and innovative approaches have contributed to the company's position as a major player in semiconductor technologies. His focus on metal-oxide semiconductor transistors reflects a commitment to refining and advancing electronic components essential for modern technological applications.

Collaborations

Throughout his career, Po-Yuan Chen has collaborated with talented coworkers, including Tsai-Fu Hsiao and Ching-I Li. These collaborations have fostered an environment of innovation and growth, allowing for the exchange of ideas and expertise in the field of semiconductor research. Their teamwork has proven vital in driving forward the advancements that Chen is renowned for.

Conclusion

Po-Yuan Chen represents the forefront of innovation within the field of semiconductor technology. With his established patents and ongoing work at United Microelectronics Corporation, Chen continues to influence the future of electronic devices through his groundbreaking methods for fabricating metal-oxide semiconductor transistors. His contributions not only enhance the performance of semiconductors but also lay the groundwork for future advancements in electronic technology.