The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Nov. 28, 2008
Tsai-fu Hsiao, Hsin-Chu, TW;
Ching-i LI, Tainan County, TW;
Po-yuan Chen, Kao-Hsiung Hsien, TW;
Chun-an Lin, Chiayi County, TW;
Hsiang-ying Wang, Chia-Yi Hsien, TW;
Chao-chun Chen, Kao-Hsiung, TW;
Chin-cheng Chien, Tainan Hsien, TW;
Tsai-Fu Hsiao, Hsin-Chu, TW;
Ching-I Li, Tainan County, TW;
Po-Yuan Chen, Kao-Hsiung Hsien, TW;
Chun-An Lin, Chiayi County, TW;
Hsiang-Ying Wang, Chia-Yi Hsien, TW;
Chao-Chun Chen, Kao-Hsiung, TW;
Chin-Cheng Chien, Tainan Hsien, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for fabricating a metal-oxide semiconductor transistor is disclosed. First, a semiconductor substrate having a gate structure thereon is provided, and a spacer is formed around the gate structure. An ion implantation process is performed to implant a molecular cluster containing carbon, boron, and hydrogen into the semiconductor substrate at two sides of the spacer for forming a doped region. The molecular weight of the molecular cluster is preferably greater than 100. Thereafter, a millisecond annealing process is performed to activate the molecular cluster within the doped region.